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File name: | 2n6766_irf250.pdf [preview 2n6766 irf250] |
Size: | 145 kB |
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Mfg: | International Rectifier |
Model: | 2n6766 irf250 🔎 |
Original: | 2n6766 irf250 🔎 |
Descr: | . Electronic Components Datasheets Active components Transistors International Rectifier 2n6766_irf250.pdf |
Group: | Electronics > Components > Transistors |
Uploaded: | 08-10-2021 |
User: | Anonymous |
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File name 2n6766_irf250.pdf PD - 90338E IRF250 REPETITIVE A ALANCHE AND dv/dt RATED V JANTX2N6766 HEXFET TRANSISTORS JANTXV2N6766 THRU-HOLE (TO-204AA/AE) [REF:MIL-PRF-19500/543] 200V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF250 200V 0.085 30A The HEXFETtechnology is the key to International Rectifier's advanced line of power MOSFET transistors. TO-3 The efficient geometry and unique processing of this latest "State of the Art" design achieves: very low on-state resis- tance combined with high transconductance; superior re- verse energy and diode recovery dv/dt capability. The HEXFET transistors also feature all of the well estab- lished advantages of MOSFETs such as voltage control, Features: very fast switching, ease of paralleling and temperature n Repetitive Avalanche Ratings stability of the electrical parameters. n Dynamic dv/dt Rating They are well suited for applications such as switching n Hermetically Sealed power supplies, motor controls, inverters, choppers, audio n Simple Drive Requirements amplifiers and high energy pulse circuits. n Ease of Paralleling Absolute Maximum Ratings Parameter Units ID @ VGS = 10V, TC = 25 |
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